GDP2406 SOI Pressure Sensor Wafer
Product Description
The GDP2406 piezoresistive pressure-sensitive chip is processed by a 6-inch MEMS production line. The pressure-sensitive chip is composed of an elastic membrane and four resistors integrated on the membrane. The four varistors form a Whiston bridge structure. When the pressure acts on the elastic membrane, the bridge will produce a The voltage output signal is linearly proportional to the applied pressure.
The chip adopts SOI structure and can be used in high-temperature fields of 180℃. The chip has good linearity, repeatability and stability, small zero-point and full-range temperature drift, excellent anti-interference ability and anti-static ability, strong overload ability, and high sensitivity. It is convenient for users to use operation and release or integrated circuits to debug the output. It is suitable for oil-filled isolation and various simple packaging pressure sensors.
Product Features
Measurement range-100...0kPa～700kPa...5000kPa
The principle of pressure resistance
SOI structure, high temperature resistance
Absolute pressure or gauge pressure form
Low-temperature drift
Excellent stability and linearity
Constant voltage and constant current power supply are available.
Application Field
Fuel pressure, oil pressure, brake system and other automotive electronics fields
Air compressors, household appliances and other fields
Water pressure test for pumps, fire fighting, diving, dams, etc.
Oil, coal mining, high-speed railway, electric power and other industrial fields
Various instruments and metres
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